Comparison of phonon scattering in nanowire field effect transistors with Si, GaAs and InGaAs cores using the NEGF formalism
نویسندگان
چکیده
منابع مشابه
Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. Th...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2015
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/647/1/012019